3rd International Workshop on Plasma Cryo Etching Processes

 

The third International Workshop on Plasma Cryogenic Etching Processes (PlaCEP) will take place at Ming Chi University of Technology in New Taipei City, Taiwan in June 25-28, 2025.

It will be jointly organized with Global Plasma Forum and the Plasma and Thin Film Technologies for Sustainable Development Goals (PTSDG) conference within the International Plasma Technology Joint Conference 2025 (IPTJC-2025

 

IPTJC

 

Scope of the PlaCEP conference :

The workshop PlaCEP is a gathering of enthusiastic scientists and engineers in the field of cryogenic etching of semiconductor-based materials using different plasma chemisties at temperatures well below 0°C. It includes the modelling, simulation and/or experimental etching of conventional materials like silicon, germanium, gallium arsenide, indium phosphide and emerging materials (2D materials like graphene or MoS2), but also its oxide and nitride ceramic compounds. Furthermore, research activities on e.g. porous low-k materials (such as organosilicate glasses) – where cryogenic adsorption and subsequent etching is beneficial or the study of reactive gases (and physisorbed self-assembled monolayers SAMs) that only adsorb on the to-be-etched materials at low temperatures – are encouraged to join. Moreover, studies on low-damage and high-selective plasma process, the formation of black silicon surfaces that benefit from cryogenic conditions are highly welcomed. Finally, special attention will be given to high aspect ratio nanoholes applied to 3D NAND by cryogenic etching process.


 

 

 


 

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